LOW VOLTAGE SRAM

In some embodiments, an SRAM includes an array of storage cells arranged as rows and columns, each storage cell of the array of storage cells includes a first type of transistor and a second type of transistor. The SRAM also includes a memory controller configured to detect a temperature of the SRAM...

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Hauptverfasser: SEETHARAMAN PREMKUMAR, MENEZES VINOD
Format: Patent
Sprache:eng
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Beschreibung
Zusammenfassung:In some embodiments, an SRAM includes an array of storage cells arranged as rows and columns, each storage cell of the array of storage cells includes a first type of transistor and a second type of transistor. The SRAM also includes a memory controller configured to detect a temperature of the SRAM and apply a body bias to the first type of transistor in each of the storage cells and refrain from an application of a body bias to the second type of transistor in each of the storage cells.