COMPONENT FOR SEMICONDUCTOR PROCESS CHAMBER HAVING SURFACE TREATMENT TO REDUCE PARTICLE EMISSION
Examples of the disclosure generally relate to a component for use in a semiconductor process chamber includes a body having machined surfaces including a first surface and a second surface. The first surface is configured to interface with a support member of the semiconductor process chamber. The...
Gespeichert in:
| Hauptverfasser: | , , , , |
|---|---|
| Format: | Patent |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | |
|---|---|
| container_issue | |
| container_start_page | |
| container_title | |
| container_volume | |
| creator | KHAN ANISUL H SUN JENNIFER CHOI JINHAN SRINIVASAN SUNIL KANUNGO BIRAJA |
| description | Examples of the disclosure generally relate to a component for use in a semiconductor process chamber includes a body having machined surfaces including a first surface and a second surface. The first surface is configured to interface with a support member of the semiconductor process chamber. The second surface is configured to face a processing region of the semiconductor process chamber. A treated area of the second surface includes relatively flatter peaks than an untreated area of the machined surfaces and exhibits an average roughness between 1 and 30 micro-inches. |
| format | Patent |
| fullrecord | <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2016056059A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2016056059A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2016056059A13</originalsourceid><addsrcrecordid>eNqNjMEKwjAQRHvxIOo_LHgWWkXBY1y3NmCyZbPxWovEk2ih_j9G8AOEgWHgvZkWV2TXsievULNAIGeR_TGi5tUKI4UA2Bh3IIHGXKw_QYhSGyRQIaPuqyqDUJYIWiNq8UyQj0Kw7OfF5N4_xrT49axY1qTYrNLw6tI49Lf0TO8uhnVZ7cptzt5Um_-oD4RvNLk</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>COMPONENT FOR SEMICONDUCTOR PROCESS CHAMBER HAVING SURFACE TREATMENT TO REDUCE PARTICLE EMISSION</title><source>esp@cenet</source><creator>KHAN ANISUL H ; SUN JENNIFER ; CHOI JINHAN ; SRINIVASAN SUNIL ; KANUNGO BIRAJA</creator><creatorcontrib>KHAN ANISUL H ; SUN JENNIFER ; CHOI JINHAN ; SRINIVASAN SUNIL ; KANUNGO BIRAJA</creatorcontrib><description>Examples of the disclosure generally relate to a component for use in a semiconductor process chamber includes a body having machined surfaces including a first surface and a second surface. The first surface is configured to interface with a support member of the semiconductor process chamber. The second surface is configured to face a processing region of the semiconductor process chamber. A treated area of the second surface includes relatively flatter peaks than an untreated area of the machined surfaces and exhibits an average roughness between 1 and 30 micro-inches.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; BLASTING ; DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS,IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KINDOF FURNACE ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; FURNACES ; HEATING ; KILNS ; LIGHTING ; MECHANICAL ENGINEERING ; OVENS ; PERFORMING OPERATIONS ; RETORTS ; SEMICONDUCTOR DEVICES ; SHAPING CLAY OR OTHER CERAMIC COMPOSITIONS, SLAG, OR MIXTURESCONTAINING CEMENTITIOUS MATERIAL, e.g. PLASTER ; TRANSPORTING ; WEAPONS ; WORKING CEMENT, CLAY, OR STONE</subject><creationdate>2016</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20160225&DB=EPODOC&CC=US&NR=2016056059A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25543,76294</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20160225&DB=EPODOC&CC=US&NR=2016056059A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>KHAN ANISUL H</creatorcontrib><creatorcontrib>SUN JENNIFER</creatorcontrib><creatorcontrib>CHOI JINHAN</creatorcontrib><creatorcontrib>SRINIVASAN SUNIL</creatorcontrib><creatorcontrib>KANUNGO BIRAJA</creatorcontrib><title>COMPONENT FOR SEMICONDUCTOR PROCESS CHAMBER HAVING SURFACE TREATMENT TO REDUCE PARTICLE EMISSION</title><description>Examples of the disclosure generally relate to a component for use in a semiconductor process chamber includes a body having machined surfaces including a first surface and a second surface. The first surface is configured to interface with a support member of the semiconductor process chamber. The second surface is configured to face a processing region of the semiconductor process chamber. A treated area of the second surface includes relatively flatter peaks than an untreated area of the machined surfaces and exhibits an average roughness between 1 and 30 micro-inches.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>BLASTING</subject><subject>DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS,IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KINDOF FURNACE</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>FURNACES</subject><subject>HEATING</subject><subject>KILNS</subject><subject>LIGHTING</subject><subject>MECHANICAL ENGINEERING</subject><subject>OVENS</subject><subject>PERFORMING OPERATIONS</subject><subject>RETORTS</subject><subject>SEMICONDUCTOR DEVICES</subject><subject>SHAPING CLAY OR OTHER CERAMIC COMPOSITIONS, SLAG, OR MIXTURESCONTAINING CEMENTITIOUS MATERIAL, e.g. PLASTER</subject><subject>TRANSPORTING</subject><subject>WEAPONS</subject><subject>WORKING CEMENT, CLAY, OR STONE</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2016</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNjMEKwjAQRHvxIOo_LHgWWkXBY1y3NmCyZbPxWovEk2ih_j9G8AOEgWHgvZkWV2TXsievULNAIGeR_TGi5tUKI4UA2Bh3IIHGXKw_QYhSGyRQIaPuqyqDUJYIWiNq8UyQj0Kw7OfF5N4_xrT49axY1qTYrNLw6tI49Lf0TO8uhnVZ7cptzt5Um_-oD4RvNLk</recordid><startdate>20160225</startdate><enddate>20160225</enddate><creator>KHAN ANISUL H</creator><creator>SUN JENNIFER</creator><creator>CHOI JINHAN</creator><creator>SRINIVASAN SUNIL</creator><creator>KANUNGO BIRAJA</creator><scope>EVB</scope></search><sort><creationdate>20160225</creationdate><title>COMPONENT FOR SEMICONDUCTOR PROCESS CHAMBER HAVING SURFACE TREATMENT TO REDUCE PARTICLE EMISSION</title><author>KHAN ANISUL H ; SUN JENNIFER ; CHOI JINHAN ; SRINIVASAN SUNIL ; KANUNGO BIRAJA</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2016056059A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2016</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>BLASTING</topic><topic>DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS,IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KINDOF FURNACE</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>FURNACES</topic><topic>HEATING</topic><topic>KILNS</topic><topic>LIGHTING</topic><topic>MECHANICAL ENGINEERING</topic><topic>OVENS</topic><topic>PERFORMING OPERATIONS</topic><topic>RETORTS</topic><topic>SEMICONDUCTOR DEVICES</topic><topic>SHAPING CLAY OR OTHER CERAMIC COMPOSITIONS, SLAG, OR MIXTURESCONTAINING CEMENTITIOUS MATERIAL, e.g. PLASTER</topic><topic>TRANSPORTING</topic><topic>WEAPONS</topic><topic>WORKING CEMENT, CLAY, OR STONE</topic><toplevel>online_resources</toplevel><creatorcontrib>KHAN ANISUL H</creatorcontrib><creatorcontrib>SUN JENNIFER</creatorcontrib><creatorcontrib>CHOI JINHAN</creatorcontrib><creatorcontrib>SRINIVASAN SUNIL</creatorcontrib><creatorcontrib>KANUNGO BIRAJA</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>KHAN ANISUL H</au><au>SUN JENNIFER</au><au>CHOI JINHAN</au><au>SRINIVASAN SUNIL</au><au>KANUNGO BIRAJA</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>COMPONENT FOR SEMICONDUCTOR PROCESS CHAMBER HAVING SURFACE TREATMENT TO REDUCE PARTICLE EMISSION</title><date>2016-02-25</date><risdate>2016</risdate><abstract>Examples of the disclosure generally relate to a component for use in a semiconductor process chamber includes a body having machined surfaces including a first surface and a second surface. The first surface is configured to interface with a support member of the semiconductor process chamber. The second surface is configured to face a processing region of the semiconductor process chamber. A treated area of the second surface includes relatively flatter peaks than an untreated area of the machined surfaces and exhibits an average roughness between 1 and 30 micro-inches.</abstract><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | |
| ispartof | |
| issn | |
| language | eng |
| recordid | cdi_epo_espacenet_US2016056059A1 |
| source | esp@cenet |
| subjects | BASIC ELECTRIC ELEMENTS BLASTING DETAILS OR ACCESSORIES OF FURNACES, KILNS, OVENS, OR RETORTS,IN SO FAR AS THEY ARE OF KINDS OCCURRING IN MORE THAN ONE KINDOF FURNACE ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FURNACES HEATING KILNS LIGHTING MECHANICAL ENGINEERING OVENS PERFORMING OPERATIONS RETORTS SEMICONDUCTOR DEVICES SHAPING CLAY OR OTHER CERAMIC COMPOSITIONS, SLAG, OR MIXTURESCONTAINING CEMENTITIOUS MATERIAL, e.g. PLASTER TRANSPORTING WEAPONS WORKING CEMENT, CLAY, OR STONE |
| title | COMPONENT FOR SEMICONDUCTOR PROCESS CHAMBER HAVING SURFACE TREATMENT TO REDUCE PARTICLE EMISSION |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-21T12%3A04%3A28IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=KHAN%20ANISUL%20H&rft.date=2016-02-25&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2016056059A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true |