SEMICONDUCTOR DEVICE

According to an embodiment, a semiconductor device includes a semiconductor element that is formed on a semiconductor substrate, an interlayer insulating film, including a silicon oxide film, that is formed to cover the semiconductor element, a wiring layer, including a metal, that is formed in the...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	MURATA TAKESHI, KUGE NOBUHITO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	According to an embodiment, a semiconductor device includes a semiconductor element that is formed on a semiconductor substrate, an interlayer insulating film, including a silicon oxide film, that is formed to cover the semiconductor element, a wiring layer, including a metal, that is formed in the interlayer insulating film, and a first metal silicide film that is formed between the wiring layer and the interlayer insulating film.