METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES USING ALIGNMENT MARKS TO ALIGN LAYERS

METHODS OF MANUFACTURING SEMICONDUCTOR DEVICES USING ALIGNMENT MARKS TO ALIGN LAYERS

A method of manufacturing a semiconductor device includes forming a first alignment mark trench in a first material layer on a substrate. A first alignment mark via may then be formed by etching a second material layer that is underneath the first material layer, where the first alignment mark via i...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: KWON BYOUNG-HO, KIM DONGAN, SHIN CHOONG-SEOB, KIM JONG-SU, PARK KI-HYUN, YOON BO-UN
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A method of manufacturing a semiconductor device includes forming a first alignment mark trench in a first material layer on a substrate. A first alignment mark via may then be formed by etching a second material layer that is underneath the first material layer, where the first alignment mark via is positioned to communicate with the first alignment mark trench. Then, a trench-via-merged-type first alignment mark may be formed by filling the first alignment mark trench and the first alignment mark via with a light reflection material layer.