SUBSTRATE MANUFACTURING METHOD AND SUBSTRATE MANUFACTURING APPARATUS

Provided are a substrate manufacturing method and a substrate manufacturing apparatus used therefor. The substrate manufacturing method includes providing a substrate having a mask film into a chamber. A plasma reaction is induced in the chamber. A first gas and a second gas are alternately provided...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: SUNG DOUGYONG, KIM KYUNG-SUN, KIM TAE-HWA, JEON KANGMIN, KIM JUNG MIN, PARK HEUNGSIK
Format: Patent
Sprache:eng
Schlagworte:
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Beschreibung
Zusammenfassung:Provided are a substrate manufacturing method and a substrate manufacturing apparatus used therefor. The substrate manufacturing method includes providing a substrate having a mask film into a chamber. A plasma reaction is induced in the chamber. A first gas and a second gas are alternately provided into the chamber to etch the substrate. Each of the first and second gases is provided into the chamber at a stabilized feed pressure including a pressure fluctuation profile comprising a square wave shape.