Fabrication of Semiconductor Device Using Alternating High and Low Temperature Layers

A method for fabricating a III-nitride semiconductor body that includes high temperature and low temperature growth steps.

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	BEACH ROBERT, BRIDGER PAUL
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	A method for fabricating a III-nitride semiconductor body that includes high temperature and low temperature growth steps.