SEMICONDUCTOR DEVICE INCLUDING A VERTICAL GATE-ALL-AROUND TRANSISTOR AND A PLANAR TRANSISTOR

SEMICONDUCTOR DEVICE INCLUDING A VERTICAL GATE-ALL-AROUND TRANSISTOR AND A PLANAR TRANSISTOR

A semiconductor device includes a first transistor and a second transistor. Each of the first and second transistors includes a channel. The channel of the first transistor extends in a substantially vertical direction. The channel of the second transistor extends in a substantially horizontal direc...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: HUANG WU-PING, LIN WUN-JIE, WANG CHINI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A semiconductor device includes a first transistor and a second transistor. Each of the first and second transistors includes a channel. The channel of the first transistor extends in a substantially vertical direction. The channel of the second transistor extends in a substantially horizontal direction. A method for fabricating the semiconductor device is also disclosed.