METHOD FOR ETCHING PROTECTIVE FILM, METHOD FOR PRODUCING TEMPLATE, AND TEMPLATE PRODUCED THEREBY

A substrate having a protective film formed on a front surface and a recess in a back surface opposite the front surface is prepared. A resist pattern is formed on the protective film. The protective film is etched using plasma while applying a bias voltage, using the resist pattern as a mask. The b...

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Bibliographische Detailangaben
1. Verfasser:	OHTSU AKIHIKO
Format:	Patent
Sprache:	eng
Schlagworte:	AFTER-TREATMENT OF THE SHAPED PRODUCTS, e.g. REPAIRING APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PERFORMING OPERATIONS PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SHAPING OF MATERIAL IN A PLASTIC STATE, NOT OTHERWISE PROVIDEDFOR SHAPING OR JOINING OF PLASTICS TRANSPORTING WORKING OF PLASTICS WORKING OF SUBSTANCES IN A PLASTIC STATE, IN GENERAL
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Beschreibung
Zusammenfassung:	A substrate having a protective film formed on a front surface and a recess in a back surface opposite the front surface is prepared. A resist pattern is formed on the protective film. The protective film is etched using plasma while applying a bias voltage, using the resist pattern as a mask. The bias voltage is increased according to the manner of decrease in the dielectric constant of a region of the substrate corresponding to a covered region of the front surface at which the protective film is present.