PATTERNING METHOD USING METAL MASK AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE INCLUDING THE SAME PATTERNING METHOD

A patterning method using a metal mask includes sequentially forming a lower metal layer and an upper metal layer on an etching object layer, forming an upper metal mask, forming the upper metal mask including patterning the upper metal layer, forming a lower metal mask, forming the lower metal mask...

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Hauptverfasser:	KIM DONGAN, JEON KYUNG-YUB, MIN GYUNG-JIN, PARK JAE-HONG, HAN JE-WOO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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creator	KIM DONGAN JEON KYUNG-YUB MIN GYUNG-JIN PARK JAE-HONG HAN JE-WOO
description	A patterning method using a metal mask includes sequentially forming a lower metal layer and an upper metal layer on an etching object layer, forming an upper metal mask, forming the upper metal mask including patterning the upper metal layer, forming a lower metal mask, forming the lower metal mask including patterning the lower metal layer using the upper metal mask, and patterning the etching object layer using the upper metal mask.
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subjects	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
title	PATTERNING METHOD USING METAL MASK AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE INCLUDING THE SAME PATTERNING METHOD
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