PATTERNING METHOD USING METAL MASK AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE INCLUDING THE SAME PATTERNING METHOD

PATTERNING METHOD USING METAL MASK AND METHOD OF FABRICATING SEMICONDUCTOR DEVICE INCLUDING THE SAME PATTERNING METHOD

A patterning method using a metal mask includes sequentially forming a lower metal layer and an upper metal layer on an etching object layer, forming an upper metal mask, forming the upper metal mask including patterning the upper metal layer, forming a lower metal mask, forming the lower metal mask...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: KIM DONGAN, JEON KYUNG-YUB, MIN GYUNG-JIN, PARK JAE-HONG, HAN JE-WOO
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A patterning method using a metal mask includes sequentially forming a lower metal layer and an upper metal layer on an etching object layer, forming an upper metal mask, forming the upper metal mask including patterning the upper metal layer, forming a lower metal mask, forming the lower metal mask including patterning the lower metal layer using the upper metal mask, and patterning the etching object layer using the upper metal mask.