Optoelectronic Thermal Interfaces for 3-Dimensional Billet Devices, Including Vertical Multijunction Photovoltaic Receivers Using Heat Sinked Anode/Billet/Cathode For High Intensity Beaming and Wireless Power Transmission

Thermal, electrical and/or optical interfacing for three-dimensional optoelectronic devices, such as semiconductor device billets, allows high intensity operation, such as for receiving and transducing extremely high intensity light shined onto a small surface semiconductor optoelectronic device such as a photovoltaic receiver or cell, transducer, waveguide or splitter. This allows high intensity energy transfer for beam receiving, signal acquisition, and beam or signal generation for high intensity power beaming and wireless power transmission. Preferred embodiments include three-dimensional photovoltaic receiver billets capable of receiving thousands of suns intensity or high intensity laser light for power conversion, such as by using edge-illuminated vertical multijunction photovoltaic receivers. Heat sink holding structures assist in thermal and electromagnetic communication with opposing billet surfaces.