SEMICONDUCTOR DEVICES INCLUDING SOURCE/DRAIN REGIONS HAVING MULTIPLE EPITAXIAL PATTERNS

SEMICONDUCTOR DEVICES INCLUDING SOURCE/DRAIN REGIONS HAVING MULTIPLE EPITAXIAL PATTERNS

A semiconductor device includes an active pattern protruding from a substrate, a gate structure crossing over the active pattern, and source/drain regions disposed on the active pattern at opposite sides of the gate structure. Each of the source/drain regions includes a first epitaxial pattern conta...

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Bibliographische Detailangaben
Hauptverfasser: PARK KEUM SEOK, YOO JUNGHO, JOE JINYEONG, LEE BYEONGCHAN, YOON HONGSIK, KOO BONYOUNG, SHIN DONGSUK
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Zusammenfassung:A semiconductor device includes an active pattern protruding from a substrate, a gate structure crossing over the active pattern, and source/drain regions disposed on the active pattern at opposite sides of the gate structure. Each of the source/drain regions includes a first epitaxial pattern contacting the active pattern and a second epitaxial pattern on the, first epitaxial pattern. The first epitaxial pattern comprises a material having a lattice constant which is the same as that of the substrate, and the second epitaxial pattern comprises a material having a lattice constant greater than that of the first epitaxial pattern.