BACK SIDE ILLUMINATED SEMICONDUCTOR STRUCTURE WITH SEMICONDUCTOR CAPACITOR CONNECTED TO FLOATING DIFFUSION NODE

BACK SIDE ILLUMINATED SEMICONDUCTOR STRUCTURE WITH SEMICONDUCTOR CAPACITOR CONNECTED TO FLOATING DIFFUSION NODE

There is provided a back side illuminated semiconductor structure with a semiconductor capacitor connected to a floating diffusion node in which the semiconductor capacitor for reducing a dimension of the floating diffusion node is provided above the floating diffusion node so as to eliminate the in...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: CHEN CHING-WEI, YEN WENNG
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:There is provided a back side illuminated semiconductor structure with a semiconductor capacitor connected to a floating diffusion node in which the semiconductor capacitor for reducing a dimension of the floating diffusion node is provided above the floating diffusion node so as to eliminate the influence thereto by incident light and enhance the light absorption efficiency.