LIQUID COMPOSITION USED IN ETCHING MULTILAYER FILM CONTAINING COPPER AND MOLYBDENUM, MANUFACTURING METHOD OF SUBSTRATE USING SAID LIQUID COMPOSITION, AND SUBSTRATE MANUFACTURED BY SAID MANUFACTURING METHOD
The present invention provides a liquid composition used for etching a multilayer film containing copper and molybdenum, an etching method for etching a multilayer film containing copper and molybdenum, and a substrate. The present invention further provides a liquid composition for etching a multil...
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| creator | YUBE KUNIO TAMAI SATOSHI |
| description | The present invention provides a liquid composition used for etching a multilayer film containing copper and molybdenum, an etching method for etching a multilayer film containing copper and molybdenum, and a substrate. The present invention further provides a liquid composition for etching a multilayer-film wiring substrate which has an oxide layer (IGZO) including indium, gallium and zinc laminated on the substrate, and further a multilayer film including at least a layer containing molybdenum and a layer containing copper provided thereon, a method for etching a multilayer film containing copper and molybdenum from the substrate, and a substrate. According to the present invention, a liquid composition comprising (A) a maleic acid ion source, (B) a copper ion source, and (C) at least one type of amine compound selected from the group consisting of 1-amino-2-propanol, 2-(methylamino)ethanol, 2-(ethylamino)ethanol, 2-(butylamino)ethanol, 2-(dimethylamino)ethanol, 2-(diethylamino)ethanol, 2-methoxyethylamine, 3-methoxypropylamine, 3-amino-1-propanol, 2-amino-2-methyl-1-propanol, 1-dimethylamino-2-propanol, 2-(2-aminoethoxyl)ethanol, morpholine and 4-(2-hydroxyethyl)morpholine and having a pH value of 4-9 is used. |
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The present invention further provides a liquid composition for etching a multilayer-film wiring substrate which has an oxide layer (IGZO) including indium, gallium and zinc laminated on the substrate, and further a multilayer film including at least a layer containing molybdenum and a layer containing copper provided thereon, a method for etching a multilayer film containing copper and molybdenum from the substrate, and a substrate. According to the present invention, a liquid composition comprising (A) a maleic acid ion source, (B) a copper ion source, and (C) at least one type of amine compound selected from the group consisting of 1-amino-2-propanol, 2-(methylamino)ethanol, 2-(ethylamino)ethanol, 2-(butylamino)ethanol, 2-(dimethylamino)ethanol, 2-(diethylamino)ethanol, 2-methoxyethylamine, 3-methoxypropylamine, 3-amino-1-propanol, 2-amino-2-methyl-1-propanol, 1-dimethylamino-2-propanol, 2-(2-aminoethoxyl)ethanol, morpholine and 4-(2-hydroxyethyl)morpholine and having a pH value of 4-9 is used.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; CHEMICAL SURFACE TREATMENT ; CHEMISTRY ; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL ; COATING MATERIAL WITH METALLIC MATERIAL ; COATING METALLIC MATERIAL ; DIFFUSION TREATMENT OF METALLIC MATERIAL ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL ; METALLURGY ; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 ; NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE ; SEMICONDUCTOR DEVICES</subject><creationdate>2015</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20151231&DB=EPODOC&CC=US&NR=2015380273A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,776,881,25542,76289</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&date=20151231&DB=EPODOC&CC=US&NR=2015380273A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>YUBE KUNIO</creatorcontrib><creatorcontrib>TAMAI SATOSHI</creatorcontrib><title>LIQUID COMPOSITION USED IN ETCHING MULTILAYER FILM CONTAINING COPPER AND MOLYBDENUM, MANUFACTURING METHOD OF SUBSTRATE USING SAID LIQUID COMPOSITION, AND SUBSTRATE MANUFACTURED BY SAID MANUFACTURING METHOD</title><description>The present invention provides a liquid composition used for etching a multilayer film containing copper and molybdenum, an etching method for etching a multilayer film containing copper and molybdenum, and a substrate. The present invention further provides a liquid composition for etching a multilayer-film wiring substrate which has an oxide layer (IGZO) including indium, gallium and zinc laminated on the substrate, and further a multilayer film including at least a layer containing molybdenum and a layer containing copper provided thereon, a method for etching a multilayer film containing copper and molybdenum from the substrate, and a substrate. According to the present invention, a liquid composition comprising (A) a maleic acid ion source, (B) a copper ion source, and (C) at least one type of amine compound selected from the group consisting of 1-amino-2-propanol, 2-(methylamino)ethanol, 2-(ethylamino)ethanol, 2-(butylamino)ethanol, 2-(dimethylamino)ethanol, 2-(diethylamino)ethanol, 2-methoxyethylamine, 3-methoxypropylamine, 3-amino-1-propanol, 2-amino-2-methyl-1-propanol, 1-dimethylamino-2-propanol, 2-(2-aminoethoxyl)ethanol, morpholine and 4-(2-hydroxyethyl)morpholine and having a pH value of 4-9 is used.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>CHEMICAL SURFACE TREATMENT</subject><subject>CHEMISTRY</subject><subject>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</subject><subject>COATING MATERIAL WITH METALLIC MATERIAL</subject><subject>COATING METALLIC MATERIAL</subject><subject>DIFFUSION TREATMENT OF METALLIC MATERIAL</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</subject><subject>METALLURGY</subject><subject>MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25</subject><subject>NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2015</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNqNT7sKwjAU7eIg6j9ccK3QB6Jr2qT2Qh61SYZOpUicRAv1N_0n0yo46OB04Z73PHhwPFqkkCtRKY0GlQSrGQWUwExeojyAsNwgJw2roUAuPFcagnKEclVV_k0kBaF4k1EmrQhBEGkLkhtbT3pmSkVBFaBtpk1NDPMZI6KJj_5uEE6GH_LHzhfLmpfsV8YymJ27y-BW77sI1sW4YuP6W-uGvju5q7u3VidRvE33UbJLSZz-x3oCZeFSwA</recordid><startdate>20151231</startdate><enddate>20151231</enddate><creator>YUBE KUNIO</creator><creator>TAMAI SATOSHI</creator><scope>EVB</scope></search><sort><creationdate>20151231</creationdate><title>LIQUID COMPOSITION USED IN ETCHING MULTILAYER FILM CONTAINING COPPER AND MOLYBDENUM, MANUFACTURING METHOD OF SUBSTRATE USING SAID LIQUID COMPOSITION, AND SUBSTRATE MANUFACTURED BY SAID MANUFACTURING METHOD</title><author>YUBE KUNIO ; TAMAI SATOSHI</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2015380273A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2015</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>CHEMICAL SURFACE TREATMENT</topic><topic>CHEMISTRY</topic><topic>COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL</topic><topic>COATING MATERIAL WITH METALLIC MATERIAL</topic><topic>COATING METALLIC MATERIAL</topic><topic>DIFFUSION TREATMENT OF METALLIC MATERIAL</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL</topic><topic>METALLURGY</topic><topic>MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25</topic><topic>NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>YUBE KUNIO</creatorcontrib><creatorcontrib>TAMAI SATOSHI</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>YUBE KUNIO</au><au>TAMAI SATOSHI</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>LIQUID COMPOSITION USED IN ETCHING MULTILAYER FILM CONTAINING COPPER AND MOLYBDENUM, MANUFACTURING METHOD OF SUBSTRATE USING SAID LIQUID COMPOSITION, AND SUBSTRATE MANUFACTURED BY SAID MANUFACTURING METHOD</title><date>2015-12-31</date><risdate>2015</risdate><abstract>The present invention provides a liquid composition used for etching a multilayer film containing copper and molybdenum, an etching method for etching a multilayer film containing copper and molybdenum, and a substrate. The present invention further provides a liquid composition for etching a multilayer-film wiring substrate which has an oxide layer (IGZO) including indium, gallium and zinc laminated on the substrate, and further a multilayer film including at least a layer containing molybdenum and a layer containing copper provided thereon, a method for etching a multilayer film containing copper and molybdenum from the substrate, and a substrate. According to the present invention, a liquid composition comprising (A) a maleic acid ion source, (B) a copper ion source, and (C) at least one type of amine compound selected from the group consisting of 1-amino-2-propanol, 2-(methylamino)ethanol, 2-(ethylamino)ethanol, 2-(butylamino)ethanol, 2-(dimethylamino)ethanol, 2-(diethylamino)ethanol, 2-methoxyethylamine, 3-methoxypropylamine, 3-amino-1-propanol, 2-amino-2-methyl-1-propanol, 1-dimethylamino-2-propanol, 2-(2-aminoethoxyl)ethanol, morpholine and 4-(2-hydroxyethyl)morpholine and having a pH value of 4-9 is used.</abstract><oa>free_for_read</oa></addata></record> |
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| subjects | BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLICMATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASSC23 AND AT LEAST ONEPROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25 NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE SEMICONDUCTOR DEVICES |
| title | LIQUID COMPOSITION USED IN ETCHING MULTILAYER FILM CONTAINING COPPER AND MOLYBDENUM, MANUFACTURING METHOD OF SUBSTRATE USING SAID LIQUID COMPOSITION, AND SUBSTRATE MANUFACTURED BY SAID MANUFACTURING METHOD |
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