ACTIVE MATRIX SUBSTRATE AND METHOD FOR MANUFACTURING THE SAME

A thin film transistor includes: a semiconductor channel film; a gate insulating film on the semiconductor channel film; a gate electrode formed of a laminated film including a first conductive film and a second conductive film on the gate insulating film; an interlayer insulating film covering the semiconductor channel film, the gate insulating film, and the gate electrode; a source electrode formed of a laminated film including a third conductive film and a fourth conductive film formed on the interlayer insulating film; and a drain electrode formed of the third conductive film. A gate wiring is formed of the laminated film including the first conductive film and the second conductive film. A source wiring is formed of the laminated film including the third conductive film and the fourth conductive film. A pixel electrode is formed of the first conductive film. A counter electrode is formed of the third conductive film.