METHOD FOR PROGRAMMING A BIPOLAR RESISTIVE SWITCHING MEMORY DEVICE

METHOD FOR PROGRAMMING A BIPOLAR RESISTIVE SWITCHING MEMORY DEVICE

An electronic circuit including a bipolar switching memory device including first and second electrodes at terminals of which a programming voltage can be applied, the circuit including: a first mechanism applying, to the first electrode, a data signal having, during a time period d, a constant stat...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: CLERMIDY FABIEN, ONKARAIAH SANTHOSH, BELLEVILLE MARC
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRONIC CIRCUITRY
ELECTRICITY
INFORMATION STORAGE
PHYSICS
PULSE TECHNIQUE
STATIC STORES
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Beschreibung
Zusammenfassung:An electronic circuit including a bipolar switching memory device including first and second electrodes at terminals of which a programming voltage can be applied, the circuit including: a first mechanism applying, to the first electrode, a data signal having, during a time period d, a constant state 0 or 1; a second mechanism applying, to the second electrode, a control signal that alternates, during time period d, between state 1 and state 0, the control signal being same regardless of the state in which the memory device is programmed; a selection device allowing a current to flow into the memory device during a programming time included in time period d; and a change of state of the control signal taking place during the programming time.