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A semiconductor chip device may include a silicon on insulator (SOI) base, a first transistor, and a voltage device. The SOI base may include a semiconductor substrate having a first doped layer and a second doped layer directly on the first doped layer, a buried oxide layer directly on the second d...

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Bibliographische Detailangaben
Hauptverfasser: YILMA DEREJE G, PHAN NGHIA V, ROSNO PATRICK L, LUKES ERIC J
Format: Patent
Sprache:eng
Schlagworte:
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