INORGANIC FILM-FORMING COMPOSITION FOR MULTILAYER RESIST PROCESSES, AND PATTERN-FORMING METHOD
An inorganic film-forming composition for multilayer resist processes includes a complex that includes: metal atoms; at least one bridging ligand; and a ligand which is other than the at least one bridging ligand and which is derived from a hydroxy acid ester, a -diketone, a -keto ester, a -dicarbox...
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Zusammenfassung: | An inorganic film-forming composition for multilayer resist processes includes a complex that includes: metal atoms; at least one bridging ligand; and a ligand which is other than the at least one bridging ligand and which is derived from a hydroxy acid ester, a -diketone, a -keto ester, a -dicarboxylic acid ester or a combination thereof. The at least one bridging ligand includes a first bridging ligand derived from a compound represented by formula (1). An amount of the first bridging ligand is no less than 50 mol % with respect to a total of the bridging ligand. In the formula (1), R1 represents an organic group having a valency of n. X represents -OH, -COOH, -NCO or -NHRa, wherein Ra represents a hydrogen atom or a monovalent organic group. n is an integer of 2 to 4. R1X)n (1) |
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