DT CAPACITOR WITH SILICIDE OUTER ELECTRODE AND/OR COMPRESSIVE STRESS LAYER, AND RELATED METHODS

DT CAPACITOR WITH SILICIDE OUTER ELECTRODE AND/OR COMPRESSIVE STRESS LAYER, AND RELATED METHODS

A deep trench capacitor is provided. The deep trench capacitor may include: a deep trench in a substrate, the deep trench including an lower portion having a width that is wider than a width of the rest of the deep trench; a compressive stress layer against the substrate in the lower portion; a meta...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: HO HERBERT L, DONATON RICARDO A, KRISHNAN RISHIKESH, BREIL NICOLAS L, KANG DONG HUN
Format: Patent
Sprache:eng
Schlagworte:
ELECTRICITY
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A deep trench capacitor is provided. The deep trench capacitor may include: a deep trench in a substrate, the deep trench including an lower portion having a width that is wider than a width of the rest of the deep trench; a compressive stress layer against the substrate in the lower portion; a metal-insulator-metal (MIM) stack over the compressive stress layer, the MIM stack including a node dielectric between an inner electrode and an outer electrode; and a semiconductor core within the MIM stack.