SEMICONDUCTOR DEVICE
In order to prevent a crack from developing in an interlayer insulating film formed under a bonding pad due to impact, the bonding pad is formed so that small diameter metal plugs (14a) and large diameter metal plugs (14b) are arranged between a first metal film (12) and a second metal film (15) as...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | In order to prevent a crack from developing in an interlayer insulating film formed under a bonding pad due to impact, the bonding pad is formed so that small diameter metal plugs (14a) and large diameter metal plugs (14b) are arranged between a first metal film (12) and a second metal film (15) as an uppermost layer, and recessed portions (17) are formed in a surface of the second metal film (15) above the large diameter metal plugs 14b. |
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