DRAM HAVING SDRAM INTERFACE AND FLASH MEMORY CONSOLIDATED MEMORY MODULE

In methods connecting a memory module configured from DRAM, which is high-speed memory, and a memory module configured from flash memory which is slower than DRAM but is high-capacity memory, to a CPU memory bus, in the case of sequential reading, the busy rate of the CPU memory bus increases, and p...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: FUKUDA YUICHI, OSAKA HIDEKI, MURAOKA SATOSHI, IDEI AKIO, UEMATSU YUTAKA, UENO HITOSHI, ONO TAKAYUKI, NAITO MICHINORI, SHIBATA MASABUMI, FUKUMURA YUUSUKE, WATANABE SATORU, MIYAGAWA TAKASHI, KAKITA HIROSHI, SUMIKURA TAISHI
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:In methods connecting a memory module configured from DRAM, which is high-speed memory, and a memory module configured from flash memory which is slower than DRAM but is high-capacity memory, to a CPU memory bus, in the case of sequential reading, the busy rate of the CPU memory bus increases, and performance degradation occurs easily. In the present invention, an information processing device has a CPU, a CPU memory bus, and a primary storage device. The primary storage device has a first memory module and a second memory module. The first memory module has high-speed memory. The second memory module has memory having the same memory interface as that of the high-speed memory, high-capacity memory having a different memory interface from that of the high-speed memory, and a controller that controls same. The first memory module and second memory module are caused to be accessed by the memory interface of the high-speed memory.