SEMICONDUCTOR DEVICE, METHOD OF MANUFACTURING THE SAME AND METHOD OF OPERATING THE SAME
Provided is a semiconductor device including a metal oxide semiconductor transistor, a Zener diode, and a resistor. The metal oxide semiconductor transistor includes a gate, a source and a drain. The resistor has one end electrically connected to the drain, wherein the resistor includes a high resis...
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Format: | Patent |
Sprache: | eng |
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Zusammenfassung: | Provided is a semiconductor device including a metal oxide semiconductor transistor, a Zener diode, and a resistor. The metal oxide semiconductor transistor includes a gate, a source and a drain. The resistor has one end electrically connected to the drain, wherein the resistor includes a high resistance which is sufficient for flowing most of current to pass the metal oxide semiconductor transistor. The Zener diode includes a cathode and an anode, in which the cathode is electrically connected the gate and another end of the resistor, and the anode is electrically connected to a gate body. |
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