REFERENCE VOLTAGE CIRCUIT
Provided is a reference voltage circuit with improved temperature characteristics. A current based on a current flowing through a first depletion transistor whose gate and source are connected to each other is caused to flow through a third depletion transistor having the same threshold, to thereby...
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Format: | Patent |
Sprache: | eng |
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Zusammenfassung: | Provided is a reference voltage circuit with improved temperature characteristics. A current based on a current flowing through a first depletion transistor whose gate and source are connected to each other is caused to flow through a third depletion transistor having the same threshold, to thereby generate a voltage between a gate and a source of the third depletion transistor. A current based on a current flowing through a second depletion transistor whose gate and source are connected to each other is caused to flow through a fourth depletion transistor having the same threshold, to thereby generate a voltage between a gate and a source of the fourth depletion transistor. A reference voltage is generated based on a difference voltage of the two voltages, to thereby obtain a reference voltage having less voltage fluctuations with respect to a temperature change. |
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