METHOD OF SELECTIVE FILLING OF MEMORY OPENINGS

METHOD OF SELECTIVE FILLING OF MEMORY OPENINGS

A method of fabricating a semiconductor device, such as a three-dimensional monolithic NAND memory string, includes providing an opening having a different sidewall material exposed on a sidewall of the opening than a bottom material exposed on a bottom of the opening, selectively forming a sacrific...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: HADA TSUYOSHI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A method of fabricating a semiconductor device, such as a three-dimensional monolithic NAND memory string, includes providing an opening having a different sidewall material exposed on a sidewall of the opening than a bottom material exposed on a bottom of the opening, selectively forming a sacrificial material on the bottom of the opening but not on the sidewall of the opening, selectively forming a first layer on the sidewall of the opening but not on the sacrificial material located on the bottom of the opening, and selectively removing the sacrificial material to expose the bottom material on the bottom of the opening such that the first layer remains on the sidewall of the opening.