OPTICAL SEMICONDUCTOR DEVICE, SEMICONDUCTOR LASER MODULE, AND OPTICAL FIBER AMPLIFIER

OPTICAL SEMICONDUCTOR DEVICE, SEMICONDUCTOR LASER MODULE, AND OPTICAL FIBER AMPLIFIER

An optical semiconductor device outputting a predetermined wavelength of laser light includes: a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction; a separate confinement heterostructure layer positioned between the quantum well...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: YOSHIDA JUNJI, ITOH HIROKAZU, IRINO SATOSHI, IRIE YUICHIRO, SAWAMURA TAKETSUGU
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
DEVICES USING STIMULATED EMISSION
ELECTRICITY
MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES
NANOTECHNOLOGY
PERFORMING OPERATIONS
SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES
TRANSPORTING
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Beschreibung
Zusammenfassung:An optical semiconductor device outputting a predetermined wavelength of laser light includes: a quantum well active layer positioned between a p-type cladding layer and an n-type cladding layer in thickness direction; a separate confinement heterostructure layer positioned between the quantum well active layer and the n-type cladding layer; and an electric-field-distribution-control layer positioned between the separate confinement heterostructure layer and the n-type cladding layer and configured by at least two semiconductor layers having band gap energy greater than band gap energy of a barrier layer constituting the quantum well active layer.