TRANSPARENT-CONDUCTIVE-FILM LAMINATE, MANUFACTURING METHOD THEREFOR, THIN-FILM SOLAR CELL, AND MANUFACTURING METHOD THEREFOR

The invention provides a transparent-conductive-film laminate and manufacturing method therefor, transparent-conductive-film laminate being useful as a surface electrode in manufacture of a high-efficiency silicon-based thin-film solar cell, having a roughness structure excellent in light scattering...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	SOGABE KENTARO, YAMANOBE YASUNORI, MATSUMURA FUMIHIKO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	The invention provides a transparent-conductive-film laminate and manufacturing method therefor, transparent-conductive-film laminate being useful as a surface electrode in manufacture of a high-efficiency silicon-based thin-film solar cell, having a roughness structure excellent in light scattering, and having an excellent effect of optical confinement, and provides a thin-film solar cell using transparent-conductive-film laminate and a manufacturing method for the thin-film solar cell. Transparent-conductive-film laminate has a structure including: an indium-oxide-based transparent conductive film (I) having a film thickness of not less than 10 nm and not more than 300 nm; and a zinc-oxide-based transparent conductive film (II) having a film thickness of not less than 200 nm, and has a surface having a crystalline structure with projections and depressions mixed therein, a surface roughness (Ra) of not less than 30 nm, a haze ratio of not less than 8%, and a resistance value of not more than 30 /sq.