METHOD OF MANUFACTURING A MULTILAYER SEMICONDUCTOR ELEMENT, AND A SEMICONDUCTOR ELEMENT MANUFACTURED AS SUCH

The present invention is directed to a method of manufacturing a multilayer semiconductor element. According to this method a first device layer is provided on a carrier by solution printing of a first material on the carrier. A second device layer is provided by solution printing of a second material solution on said first device layer; the second material solution comprising second device layer material dissolved in a solvent. Prior to solution printing of the second device layer, a barrier interlayer is added onto the first layer for being arranged in between said first and said second device layer. The barrier interlayer comprises an interlayer material insoluble to said solvent, and arranged for enabling electric interaction between the first and second device layer. The invention further provides a semiconductor element.