PLASMA PROCESSING METHOD AND PLASMA PROCESSING APPARATUS

Provided are a plasma processing method and a plasma processing apparatus which may form a protective film on the surface of an etching stop layer and suppress clogging of openings of holes when etching an oxide layer are provided. The plasma processing method forms a plurality of holes having diffe...

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Bibliographische Detailangaben
Hauptverfasser:	MATSUMOTO HIROIE, OGAWA KAZUTO
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	Provided are a plasma processing method and a plasma processing apparatus which may form a protective film on the surface of an etching stop layer and suppress clogging of openings of holes when etching an oxide layer are provided. The plasma processing method forms a plurality of holes having different depths in multi-layered films that include an oxide layer, a plurality of etching stop layers made of tungsten, and a mask layer. The plasma processing method includes an etching process in which a processing gas is supplied to generate plasma such that etching is performed from the top surface of the oxide layer to the plurality of etching stop layers so as to form hole having different depths in the oxide layer. Here, the processing gas includes a fluorocarbon-based gas, a rare gas, oxygen, and nitrogen.