METHODS OF FORMING FINS FOR FINFET SEMICONDUCTOR DEVICES AND THE SELECTIVE REMOVAL OF SUCH FINS

One method includes forming a plurality of first trenches in a semiconductor substrate to thereby define a plurality of initial fins in the substrate, removing at least one, but less than all, of the plurality of initial fins, forming a fin protection layer on at least the sidewalls of the remaining initial fins, with the fin protection layer in position, performing an etching process to extend a depth of the first trenches to thereby define a plurality of final trenches with a final trench depth, wherein the final trenches define a plurality of final fin structures that each comprise an initial fin, removing the fin protection layer, and forming a recessed layer of insulating material in the final trenches, wherein the recessed layer of insulating material has a recessed surface that exposes a portion of the final fin structures.