OXIDE SEMICONDUCTOR THIN FILM AND THIN FILM TRANSISTOR
An oxide crystalline thin film having a comparatively high carrier mobility and suitable as TFT channel layer material is provided. The oxide semiconductor thin film of the present invention comprises an oxide that includes indium and tungsten, with the tungsten content in the W/In atomic ratio bein...
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | An oxide crystalline thin film having a comparatively high carrier mobility and suitable as TFT channel layer material is provided. The oxide semiconductor thin film of the present invention comprises an oxide that includes indium and tungsten, with the tungsten content in the W/In atomic ratio being 0.005 to 0.12, is crystalline, comprises only the In2O3 phase of bixbyite structure, and has a carrier density of 1×1018 cm−3 or less and a carrier mobility of higher than 1 cm2/Vsec. The oxide is able to include zinc further with the zinc content in the Z/In atomic ratio of 0.05 or less. |
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