SUBSTRATE PROCESSING APPARATUS, METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE AND NON-TRANSITORY COMPUTER-READABLE RECORDING MEDIUM

The present invention provides technology capable of suppressing a deposition of by-products in a substrate processing apparatus. When a process gas is supplied into a process vessel, an inert gas having a flow rate controlled by a flow rate controller is supplied to a first and second supply pipes...

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Bibliographische Detailangaben
Hauptverfasser:	NISHIDA MASAYA, NAKASHIMA SEIYO, MIYASHITA TOMOYASU, SASAJIMA RYOTA
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS CHEMICAL SURFACE TREATMENT CHEMISTRY COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATIONOR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY IONIMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL COATING MATERIAL WITH METALLIC MATERIAL COATING METALLIC MATERIAL DIFFUSION TREATMENT OF METALLIC MATERIAL ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION INGENERAL METALLURGY SEMICONDUCTOR DEVICES SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THESURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION
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Beschreibung
Zusammenfassung:	The present invention provides technology capable of suppressing a deposition of by-products in a substrate processing apparatus. When a process gas is supplied into a process vessel, an inert gas having a flow rate controlled by a flow rate controller is supplied to a first and second supply pipes through a third supply pipe, the inert gas of the first supply pipe is ejected into the process vessel by a first ejection part and the inert gas of the second supply pipe is ejected toward an inner wall surface by a second ejection part.