METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE

It is an object of the present invention to provide a method for manufacturing a silicon carbide semiconductor device capable of preventing an increase in a cost of manufacturing one chip while favorably maintaining forward characteristics of the semiconductor device. The present invention includes...

Ausführliche Beschreibung

Gespeichert in:

Bibliographische Detailangaben
Hauptverfasser:	NAKAMURA TAKUYO, SUGIMOTO HIROSHI
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
Online-Zugang:	Volltext bestellen
Tags:	Tag hinzufügen Keine Tags, Fügen Sie den ersten Tag hinzu!

Beschreibung
Zusammenfassung:	It is an object of the present invention to provide a method for manufacturing a silicon carbide semiconductor device capable of preventing an increase in a cost of manufacturing one chip while favorably maintaining forward characteristics of the semiconductor device. The present invention includes the steps of: (a) inspecting the characteristics of the forward conduction of body diodes as element structures; (b) classifying the body diode and the body diode as a first group suitable for the forward conduction or a second group unsuitable for the forward conduction on the basis of an inspection result of the step (a); and (c) manufacturing a silicon carbide semiconductor MOSFET that needs the forward conduction using the body diode of the first group or manufacturing a silicon carbide semiconductor MOSFET that does not need the forward conduction using the body diode of the second group.