Method of Making a FinFET Device

A method of fabricating a fin-like field-effect transistor (FinFET) device includes providing a substrate having a first region and a second region, and forming a plurality of mandrel features in the first region with a first spacing. The method further includes forming first spacers along sidewalls of the mandrel features with a targeted width A, and forming second spacers with a first width W1 along sidewalls of the first spacers, wherein two back-to-back adjacent second spacers are separated by a gap. The method further includes depositing a dielectric material in the gap and in the second region, and performing a first cut thereby removing a first subset of the first spacers. Coincident with the removing of the first subset, the method further includes partially removing the dielectric material in the second region thereby forming a mesa of the dielectric material in the second region.