METHOD AND APPARATUS FOR POWER DEVICE WITH MULTIPLE DOPED REGIONS

METHOD AND APPARATUS FOR POWER DEVICE WITH MULTIPLE DOPED REGIONS

A semiconductor device is provided. The device includes a substrate having a first conductivity type. The device further includes a drain region, a source region, and a well region disposed in the substrate. The well region is disposed between the drain region and the source region and having a seco...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: CHANG JUIUN, HUANG CHIH-JEN, HO YU-HAO, LIN WEN-HSIN, LIN SHINNG, TU SHANG-HUI
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A semiconductor device is provided. The device includes a substrate having a first conductivity type. The device further includes a drain region, a source region, and a well region disposed in the substrate. The well region is disposed between the drain region and the source region and having a second conductivity type opposite to the first conductivity type. The device further includes a plurality of doped regions disposed within the well region. The doped regions are vertically and horizontally offset from each other. Each of the doped regions includes a lower portion having the first conductivity type, and an upper portion stacked on the lower region and having the second conductivity type.