SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING

A semiconductor device includes a gate structure, and a source region and a drain region on opposite sides of the gate structure. The source region comprises a first region of a first conductivity type, and a second region of a second conductivity type, the second conductivity type opposite to the f...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: CHU PO-TAO, HUANG TZU-MING, CHEN LIEHUAN, WANG SHEN-PING, SHEN CHIH-HENG
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A semiconductor device includes a gate structure, and a source region and a drain region on opposite sides of the gate structure. The source region comprises a first region of a first conductivity type, and a second region of a second conductivity type, the second conductivity type opposite to the first conductivity type. The first region is arranged between the second region and the gate structure. The second region comprises at least one projection protruding into the first region and toward the gate structure.