SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF FORMING THE SAME

A semiconductor device comprising a substrate, a channel layer over the substrate, an active layer over the channel layer and a laminate layer in contact with the active layer. The active layer has a band gap discontinuity with the channel layer.

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Bibliographische Detailangaben
Hauptverfasser: LIN HSING-LIEN, TSAI CHENG-YUAN, CHIU HANIN
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:A semiconductor device comprising a substrate, a channel layer over the substrate, an active layer over the channel layer and a laminate layer in contact with the active layer. The active layer has a band gap discontinuity with the channel layer.