SEMICONDUCTOR DEVICE AND FORMATION THEREOF
A semiconductor device and method of formation are provided. A semiconductor device includes a copper fill over a first layer in a first opening. The first layer includes cobalt and tungsten. A third layer including cobalt and tungsten is over the copper fill and the first layer. The first layer inc...
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Format: | Patent |
Sprache: | eng |
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Zusammenfassung: | A semiconductor device and method of formation are provided. A semiconductor device includes a copper fill over a first layer in a first opening. The first layer includes cobalt and tungsten. A third layer including cobalt and tungsten is over the copper fill and the first layer. The first layer including cobalt and tungsten has a smoother sidewall than a first layer that does not have cobalt or tungsten. A smoother sidewall decreases defects in the copper fill, thus increasing conductivity of the copper fill. The first layer and the third layer reduce out diffusion of copper from the copper fill as compared to a semiconductor device that does not comprise such layers. |
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