Air Gap Formation Between Bit Lines with Side Protection

Air Gap Formation Between Bit Lines with Side Protection

Air gaps are formed between bit lines by etching to remove sacrificial material from between bit lines. Bit lines are protected from etch damage. Sacrificial material may be selectively oxidized prior to deposition of bit line metal so that protective oxide lies along sides of bit lines during etch....

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: TAKEGUCHI NAOKI, GUNJI-YONEOKA MARIKA, TOKUNAGA KAZUYA, PARK CHAN, PHAM TUAN D, SEL JONG SUN
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Air gaps are formed between bit lines by etching to remove sacrificial material from between bit lines. Bit lines are protected from etch damage. Sacrificial material may be selectively oxidized prior to deposition of bit line metal so that protective oxide lies along sides of bit lines during etch. Portions of protective material may be selectively formed on tops of bit lines prior to etching sacrificial material.