ULTRATHIN BODY FULLY DEPLETED SILICON-ON-INSULATOR INTEGRATED CIRCUITS AND METHODS FOR FABRICATING SAME

Methods for fabricating integrated circuits are provided. In an embodiment, a method for fabricating an integrated circuit includes providing an ultrathin body fully depleted silicon-on-insulator substrate. The method forms a temporary gate structure over the substrate and forms lightly doped source/drain extension areas around the gate structure. Further, the method includes performing an annealing process on the lightly doped source/drain extension areas. Outdiffusion from the lightly doped source/drain extensions is less than 5 nm during the annealing process. The method includes forming a strain region around the gate structure.