HIGH DENSITY LOW POWER GSHE-STT MRAM

Systems and methods are directed to a memory element comprising a hybrid giant spin Hall effect (GSHE)-spin transfer torque (STT) magnetoresistive random access memory (MRAM) element, which includes a GSHE strip formed between a first terminal (A) and a second terminal (B), and a magnetic tunnel junction (MTJ), with a free layer of the MTJ interfacing the GSHE strip, and a fixed layer of the MTJ coupled to a third terminal (C). The orientation of the easy axis of the free layer is perpendicular to the magnetization created by electrons traversing the GSHE strip between the first terminal and the second terminal, such that the free layer of the MTJ is configured to switch based on a first charge current injected from/to the first terminal to/from the second terminal and a second charge current injected/extracted through the third terminal into/out of the MTJ via the third terminal (C).