ERROR CORRECTION IN MEMORY DEVICES BY MULTIPLE READINGS WITH DIFFERENT REFERENCES

A memory device may include memory cells. The method may include receiving a request of reading a selected data word associated with a selected code word stored with an error correction code, and reading a first code word representing a first version of the selected code word by comparing a state of each selected memory cell with a first reference. The method may include verifying the first code word, setting the selected code word according to the first code word in response to a positive verification, reading at least one second code word representing a second version of the selected code word, verifying the second code word, and setting the selected code word according to the second code word in response to a negative verification of the first code word and to a positive verification of the second code word.