SEMICONDUCTOR DEVICE WITH A MULTIPLE NANOWIRE CHANNEL STRUCTURE AND METHODS OF VARIABLY CONNECTING SUCH NANOWIRES FOR CURRENT DENSITY MODULATION

SEMICONDUCTOR DEVICE WITH A MULTIPLE NANOWIRE CHANNEL STRUCTURE AND METHODS OF VARIABLY CONNECTING SUCH NANOWIRES FOR CURRENT DENSITY MODULATION

A nanowire device is disclosed that includes first and second nanowires, a gate structure positioned around a portion of the first and second nanowires and a phase change material surrounding at least a portion of the first nanowire in the source/drain regions of the device but not surrounding the s...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: LICAUSI NICHOLAS VINCENT, WAHL JEREMY AUSTIN
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A nanowire device is disclosed that includes first and second nanowires, a gate structure positioned around a portion of the first and second nanowires and a phase change material surrounding at least a portion of the first nanowire in the source/drain regions of the device but not surrounding the second nanowire in the source/drain regions.