P-TYPE METAL OXIDE SEMICONDUCTOR MATERIAL AND METHOD FOR FABRICATING THE SAME
A P-type metal oxide semiconductor material is provided. The P-type metal oxide semiconductor material has a formula of In(1−3)Ga(1−b)Zn(1+a+b)O4, wherein 0 a 0.1, 0 b 0.1, and 0
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| Format: | Patent |
| Sprache: | eng |
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| Zusammenfassung: | A P-type metal oxide semiconductor material is provided. The P-type metal oxide semiconductor material has a formula of In(1−3)Ga(1−b)Zn(1+a+b)O4, wherein 0 a 0.1, 0 b 0.1, and 0 |
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