HALOGEN DOPING SOURCE FOR DOPING OXIDE THIN FILM WlTH HALOGEN USING ATOMlC LAYER DEPOSITION, METHOD FOR MANUFACTURING THE HALOGEN DOPING SOURCE, METHOD FOR DOPING OXIDE THIN FILM WlTH HALOGEN USING ATOMIC LAYER DEPOSITlON, AND OXIDE THIN FILM DOPED WITH HALOGEN MANUFACTURED BY USING THE METHOD FOR DOPING OXIDE THIN FILM WITH HALOGEN

A halogen doping source for doping part of an oxide thin film with halogen by atomic layer deposition, a method of manufacturing the same halogen doping source, a method of doping part of an oxide thin film with the same halogen doping source by atomic layer deposition and a halogen-doped oxide thin...

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Bibliographische Detailangaben
Hauptverfasser:	PARK HYUNGHO, CHOI YONGJUNE, KANG KYUNGMUN
Format:	Patent
Sprache:	eng
Schlagworte:	ADHESIVES BASIC ELECTRIC ELEMENTS CHEMICAL PAINT OR INK REMOVERS CHEMISTRY COATING COMPOSITIONS, e.g. PAINTS, VARNISHES ORLACQUERS CORRECTING FLUIDS DYES ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY FILLING PASTES INKS METALLURGY MISCELLANEOUS APPLICATIONS OF MATERIALS MISCELLANEOUS COMPOSITIONS NATURAL RESINS PAINTS PASTES OR SOLIDS FOR COLOURING OR PRINTING POLISHES SEMICONDUCTOR DEVICES USE OF MATERIALS THEREFOR WOODSTAINS
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Beschreibung
Zusammenfassung:	A halogen doping source for doping part of an oxide thin film with halogen by atomic layer deposition, a method of manufacturing the same halogen doping source, a method of doping part of an oxide thin film with the same halogen doping source by atomic layer deposition and a halogen-doped oxide thin film fabricated by the same doping method. The halogen doping source is a solution in which a hydrogen halide is diluted with water. The hydrogen halide diluted in 48 to 51% is prepared and subsequently added to deionized water, thereby forming a diluted solution. A substrate on which an oxide thin film is formed is loaded into an atomic layer deposition chamber. The diluted solution is sprayed into the chamber, whereby part of the oxide thin film is substituted with the halogen.