Methods of Forming Patterns

Some embodiments include methods of forming patterns. A first mask is formed over a material. The first mask has features extending therein and defines a first pattern. The first pattern has a first level of uniformity across a distribution of the features. A brush layer is formed across the first m...

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Bibliographische Detailangaben
Hauptverfasser:	OLSON ADAM, EOM HO SEOP, PARK JONG KEUN, MIRIN NIK, BROWN WILLIAM R, JAIN KAVERI, MILLWARD DAN, HUSTAD PHILLIP DENE, LEE CHRISTOPHER NAM, CHEN XUE GLORIA, TREFONAS, III PETER
Format:	Patent
Sprache:	eng
Schlagworte:	BASIC ELECTRIC ELEMENTS ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	Some embodiments include methods of forming patterns. A first mask is formed over a material. The first mask has features extending therein and defines a first pattern. The first pattern has a first level of uniformity across a distribution of the features. A brush layer is formed across the first mask and within the features to narrow the features and create a second mask from the first mask. The second mask has a second level of uniformity across the narrowed features which is greater than the first level of uniformity. A pattern is transferred from the second mask into the material.