SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

This semiconductor device (100) includes a substrate (10) and a TFT which is provided on the substrate. The TFT includes a gate electrode (12), an oxide semiconductor layer (14) which faces the gate electrode, source and drain electrodes (16, 18) which are connected to the oxide semiconductor layer,...

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1. Verfasser: TOMIYASU KAZUHIDE
Format: Patent
Sprache:eng
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