SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SAME

This semiconductor device (100) includes a substrate (10) and a TFT which is provided on the substrate. The TFT includes a gate electrode (12), an oxide semiconductor layer (14) which faces the gate electrode, source and drain electrodes (16, 18) which are connected to the oxide semiconductor layer,...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: TOMIYASU KAZUHIDE
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:This semiconductor device (100) includes a substrate (10) and a TFT which is provided on the substrate. The TFT includes a gate electrode (12), an oxide semiconductor layer (14) which faces the gate electrode, source and drain electrodes (16, 18) which are connected to the oxide semiconductor layer, and an insulating layer (22) which contacts at least partially with the source and drain electrodes. The insulating layer (22) includes a lower region (22b) which contacts at least partially with the source and drain electrodes and an upper region (22a) which is located over the lower region. The lower region (22b) has a higher hydrogen content than the upper region (22a).