BLOCK CO-POLYMER PHOTORESIST

An integrated circuit is made by depositing a pinning layer on a substrate. A block copolymer photoresist is formed on the pinning layer. The block copolymer has two blocks A and B that do not self-assemble under at least some annealing conditions. The exposed block copolymer photoresist is processe...

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Bibliographische Detailangaben
Hauptverfasser:	WEHRENBERG BRIAN L, COOPER GREGORY D
Format:	Patent
Sprache:	eng
Schlagworte:	APPARATUS SPECIALLY ADAPTED THEREFOR BASIC ELECTRIC ELEMENTS CINEMATOGRAPHY ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ELECTRICITY ELECTROGRAPHY HOLOGRAPHY MATERIALS THEREFOR ORIGINALS THEREFOR PHOTOGRAPHY PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES,e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTORDEVICES PHYSICS SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:	An integrated circuit is made by depositing a pinning layer on a substrate. A block copolymer photoresist is formed on the pinning layer. The block copolymer has two blocks A and B that do not self-assemble under at least some annealing conditions. The exposed block copolymer photoresist is processed to cleave at least some block copolymer bonds in the exposed selected regions. The exposed pinning layer is processed to create a chemical epitaxial pattern to direct the local self assembly of the block copolymer.