METHOD OF SUBSTRATE TEMPERATURE CONTROL DURING HIGH TEMPERATURE WET PROCESSING

METHOD OF SUBSTRATE TEMPERATURE CONTROL DURING HIGH TEMPERATURE WET PROCESSING

Methods are provided for processing a substrate in single substrate tool. In one embodiment, the method includes providing the substrate in the single substrate tool, applying a first processing fluid at a first temperature greater than 100° C. to a lower surface of the substrate to heat the substra...

Ausführliche Beschreibung

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Bibliographische Detailangaben
1. Verfasser: SIEFERING KEVIN L
Format: Patent
Sprache:eng
Schlagworte:
BASIC ELECTRIC ELEMENTS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
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Beschreibung
Zusammenfassung:Methods are provided for processing a substrate in single substrate tool. In one embodiment, the method includes providing the substrate in the single substrate tool, applying a first processing fluid at a first temperature greater than 100° C. to a lower surface of the substrate to heat the substrate to approximately the first temperature, and applying a second processing fluid at a second temperature greater than 100° C. to an upper surface of the substrate.