METHOD OF PROCESSING A SUBSTRATE AND APPARATUS FOR PERFORMING THE SAME

In a method of processing a substrate, a first plasma may be generated from a first reaction gas. A second plasma may be generated from a second reaction gas. The first plasma and the second plasma may be individually applied to the substrate. Thus, each of the at least two remote plasma sources may...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: VLADMIR VOLYNETS, LEE SANG-HEON, KIM GON-JUN, JEON SANG-JEAN, PARK YONG-KYUN, KIM SAM HYUNG-SAM, SONG INOL
Format: Patent
Sprache:eng
Schlagworte:
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
container_end_page
container_issue
container_start_page
container_title
container_volume
creator VLADMIR VOLYNETS
LEE SANG-HEON
KIM GON-JUN
JEON SANG-JEAN
PARK YONG-KYUN
KIM SAM HYUNG-SAM
SONG INOL
description In a method of processing a substrate, a first plasma may be generated from a first reaction gas. A second plasma may be generated from a second reaction gas. The first plasma and the second plasma may be individually applied to the substrate. Thus, each of the at least two remote plasma sources may generate at least two plasmas under different process recipes, which may be optimized for processing the substrate. As a result, the substrate processed using the optimal plasmas may have a desired shape.
format Patent
fullrecord <record><control><sourceid>epo_EVB</sourceid><recordid>TN_cdi_epo_espacenet_US2015155178A1</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><sourcerecordid>US2015155178A1</sourcerecordid><originalsourceid>FETCH-epo_espacenet_US2015155178A13</originalsourceid><addsrcrecordid>eNrjZHDzdQ3x8HdR8HdTCAjyd3YNDvb0c1dwVAgOdQoOCXIMcVVw9HNRcAwIcARyQoMV3PyDFAJcg4CUL0hhiIerQrCjrysPA2taYk5xKi-U5mZQdnMNcfbQTS3Ij08tLkhMTs1LLYkPDTYyMDQ1NDU1NLdwNDQmThUAUWstIw</addsrcrecordid><sourcetype>Open Access Repository</sourcetype><iscdi>true</iscdi><recordtype>patent</recordtype></control><display><type>patent</type><title>METHOD OF PROCESSING A SUBSTRATE AND APPARATUS FOR PERFORMING THE SAME</title><source>esp@cenet</source><creator>VLADMIR VOLYNETS ; LEE SANG-HEON ; KIM GON-JUN ; JEON SANG-JEAN ; PARK YONG-KYUN ; KIM SAM HYUNG-SAM ; SONG INOL</creator><creatorcontrib>VLADMIR VOLYNETS ; LEE SANG-HEON ; KIM GON-JUN ; JEON SANG-JEAN ; PARK YONG-KYUN ; KIM SAM HYUNG-SAM ; SONG INOL</creatorcontrib><description>In a method of processing a substrate, a first plasma may be generated from a first reaction gas. A second plasma may be generated from a second reaction gas. The first plasma and the second plasma may be individually applied to the substrate. Thus, each of the at least two remote plasma sources may generate at least two plasmas under different process recipes, which may be optimized for processing the substrate. As a result, the substrate processed using the optimal plasmas may have a desired shape.</description><language>eng</language><subject>BASIC ELECTRIC ELEMENTS ; ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS ; ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR ; ELECTRICITY ; SEMICONDUCTOR DEVICES</subject><creationdate>2015</creationdate><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20150604&amp;DB=EPODOC&amp;CC=US&amp;NR=2015155178A1$$EHTML$$P50$$Gepo$$Hfree_for_read</linktohtml><link.rule.ids>230,308,780,885,25564,76547</link.rule.ids><linktorsrc>$$Uhttps://worldwide.espacenet.com/publicationDetails/biblio?FT=D&amp;date=20150604&amp;DB=EPODOC&amp;CC=US&amp;NR=2015155178A1$$EView_record_in_European_Patent_Office$$FView_record_in_$$GEuropean_Patent_Office$$Hfree_for_read</linktorsrc></links><search><creatorcontrib>VLADMIR VOLYNETS</creatorcontrib><creatorcontrib>LEE SANG-HEON</creatorcontrib><creatorcontrib>KIM GON-JUN</creatorcontrib><creatorcontrib>JEON SANG-JEAN</creatorcontrib><creatorcontrib>PARK YONG-KYUN</creatorcontrib><creatorcontrib>KIM SAM HYUNG-SAM</creatorcontrib><creatorcontrib>SONG INOL</creatorcontrib><title>METHOD OF PROCESSING A SUBSTRATE AND APPARATUS FOR PERFORMING THE SAME</title><description>In a method of processing a substrate, a first plasma may be generated from a first reaction gas. A second plasma may be generated from a second reaction gas. The first plasma and the second plasma may be individually applied to the substrate. Thus, each of the at least two remote plasma sources may generate at least two plasmas under different process recipes, which may be optimized for processing the substrate. As a result, the substrate processed using the optimal plasmas may have a desired shape.</description><subject>BASIC ELECTRIC ELEMENTS</subject><subject>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</subject><subject>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</subject><subject>ELECTRICITY</subject><subject>SEMICONDUCTOR DEVICES</subject><fulltext>true</fulltext><rsrctype>patent</rsrctype><creationdate>2015</creationdate><recordtype>patent</recordtype><sourceid>EVB</sourceid><recordid>eNrjZHDzdQ3x8HdR8HdTCAjyd3YNDvb0c1dwVAgOdQoOCXIMcVVw9HNRcAwIcARyQoMV3PyDFAJcg4CUL0hhiIerQrCjrysPA2taYk5xKi-U5mZQdnMNcfbQTS3Ij08tLkhMTs1LLYkPDTYyMDQ1NDU1NLdwNDQmThUAUWstIw</recordid><startdate>20150604</startdate><enddate>20150604</enddate><creator>VLADMIR VOLYNETS</creator><creator>LEE SANG-HEON</creator><creator>KIM GON-JUN</creator><creator>JEON SANG-JEAN</creator><creator>PARK YONG-KYUN</creator><creator>KIM SAM HYUNG-SAM</creator><creator>SONG INOL</creator><scope>EVB</scope></search><sort><creationdate>20150604</creationdate><title>METHOD OF PROCESSING A SUBSTRATE AND APPARATUS FOR PERFORMING THE SAME</title><author>VLADMIR VOLYNETS ; LEE SANG-HEON ; KIM GON-JUN ; JEON SANG-JEAN ; PARK YONG-KYUN ; KIM SAM HYUNG-SAM ; SONG INOL</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-epo_espacenet_US2015155178A13</frbrgroupid><rsrctype>patents</rsrctype><prefilter>patents</prefilter><language>eng</language><creationdate>2015</creationdate><topic>BASIC ELECTRIC ELEMENTS</topic><topic>ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS</topic><topic>ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR</topic><topic>ELECTRICITY</topic><topic>SEMICONDUCTOR DEVICES</topic><toplevel>online_resources</toplevel><creatorcontrib>VLADMIR VOLYNETS</creatorcontrib><creatorcontrib>LEE SANG-HEON</creatorcontrib><creatorcontrib>KIM GON-JUN</creatorcontrib><creatorcontrib>JEON SANG-JEAN</creatorcontrib><creatorcontrib>PARK YONG-KYUN</creatorcontrib><creatorcontrib>KIM SAM HYUNG-SAM</creatorcontrib><creatorcontrib>SONG INOL</creatorcontrib><collection>esp@cenet</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>VLADMIR VOLYNETS</au><au>LEE SANG-HEON</au><au>KIM GON-JUN</au><au>JEON SANG-JEAN</au><au>PARK YONG-KYUN</au><au>KIM SAM HYUNG-SAM</au><au>SONG INOL</au><format>patent</format><genre>patent</genre><ristype>GEN</ristype><title>METHOD OF PROCESSING A SUBSTRATE AND APPARATUS FOR PERFORMING THE SAME</title><date>2015-06-04</date><risdate>2015</risdate><abstract>In a method of processing a substrate, a first plasma may be generated from a first reaction gas. A second plasma may be generated from a second reaction gas. The first plasma and the second plasma may be individually applied to the substrate. Thus, each of the at least two remote plasma sources may generate at least two plasmas under different process recipes, which may be optimized for processing the substrate. As a result, the substrate processed using the optimal plasmas may have a desired shape.</abstract><oa>free_for_read</oa></addata></record>
fulltext fulltext_linktorsrc
identifier
ispartof
issn
language eng
recordid cdi_epo_espacenet_US2015155178A1
source esp@cenet
subjects BASIC ELECTRIC ELEMENTS
ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
ELECTRIC SOLID STATE DEVICES NOT OTHERWISE PROVIDED FOR
ELECTRICITY
SEMICONDUCTOR DEVICES
title METHOD OF PROCESSING A SUBSTRATE AND APPARATUS FOR PERFORMING THE SAME
url https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2024-12-20T08%3A18%3A59IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-epo_EVB&rft_val_fmt=info:ofi/fmt:kev:mtx:patent&rft.genre=patent&rft.au=VLADMIR%20VOLYNETS&rft.date=2015-06-04&rft_id=info:doi/&rft_dat=%3Cepo_EVB%3EUS2015155178A1%3C/epo_EVB%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rfr_iscdi=true